SIHD6N65E-GE3 - MOSFET N-CH 650V 7A TO252

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SIHD6N65E-GE3

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ABC-SIHD6N65E-GE3

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Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 650V 7A TO252

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

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359688 Pieces

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~~USD 0.91~~

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ABC Semiconductor on SIHD6N65E-GE3 laos müüa.

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spetsifikatsioonid SIHD6N65E-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SIHD6N65E-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 650V 7A TO252

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 650V

Praegune - pidev äravool (id) @ 25 ° C : 7A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 600 mOhm @ 3A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 48nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 820pF @ 100V

FET funktsioon : -

Võimsuse hajumine (max) : 78W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : D-PAK (TO-252AA)

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : SIHD , SIHD6N

dokumendid SIHD6N65E-GE3

andmelehe : SIHD6N65E-GE3.pdf

Seotud tooted SIHD6N65E-GE3 Vishay Siliconix

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