SI7862ADP-T1-GE3 - MOSFET N-CH 16V 18A PPAK SO-8

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SI7862ADP-T1-GE3

Sisemine osa number

ABC-SI7862ADP-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 16V 18A PPAK SO-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

272839 Pieces

Viide Hind

~~USD 1.19966~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI7862ADP-T1-GE3 laos müüa.

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spetsifikatsioonid SI7862ADP-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI7862ADP-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 16V 18A PPAK SO-8

seeria : TrenchFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 16V

Praegune - pidev äravool (id) @ 25 ° C : 18A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 2.5V, 4.5V

Rds sees (max) @ id, Vgs : 3 mOhm @ 29A, 4.5V

Vgs (th) (maksimaalselt) @ id : 2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 80nC @ 4.5V

VG (maksimaalselt) : ±8V

Sisendmahtuvus (Ciss) (Max) @ Vds : 7340pF @ 8V

FET funktsioon : -

Võimsuse hajumine (max) : 1.9W (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PowerPAK® SO-8

Pakett / kohver : PowerPAK® SO-8

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI786 , SI7862AD

dokumendid SI7862ADP-T1-GE3

andmelehe : SI7862ADP-T1-GE3.pdf

Seotud tooted SI7862ADP-T1-GE3 Vishay Siliconix

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