JAN1N5809US - DIODE GEN PURP 100V 6A B-MELF

Tootja arv

JAN1N5809US

Sisemine osa number

ABC-JAN1N5809US

tootja

Microsemi Corporation

Lühikirjeldus

DIODE GEN PURP 100V 6A B-MELF

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

79938 Pieces

Viide Hind

~~USD 5.26405~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on JAN1N5809US laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid JAN1N5809US

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : JAN1N5809US

tootja : Microsemi Corporation

kirjeldus : DIODE GEN PURP 100V 6A B-MELF

seeria : Military, MIL-PRF-19500/477

Osa olek : Active

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 100V

Praegune - keskmine puhastatud (Io) : 6A

Pinge - edasi (Vf) (maksimaalselt) @ kui : 875mV @ 4A

Kiirus : Fast Recovery =< 500ns, > 200mA (Io)

Vastupidine taastumisaeg (trr) : 30ns

Praegune - vastupidine leke @ Vr : 5µA @ 100V

Mahtuvus @ Vr, F : 60pF @ 10V, 1MHz

Paigaldus tüüp : Surface Mount

Pakett / kohver : SQ-MELF, B

Tarnija seadme pakett : B, SQ-MELF

Töötemperatuur - ristmik : -65°C ~ 175°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : JAN , JAN1N

dokumendid JAN1N5809US

andmelehe : JAN1N5809US.pdf

Seotud tooted JAN1N5809US Microsemi Corporation

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