BSG0810NDIATMA1 - MOSFET 2N-CH 25V 19A/39A 8TISON

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BSG0810NDIATMA1

Sisemine osa number

ABC-BSG0810NDIATMA1

tootja

Infineon Technologies

Lühikirjeldus

MOSFET 2N-CH 25V 19A/39A 8TISON

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

583912 Pieces

Viide Hind

~~USD 0.56056~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on BSG0810NDIATMA1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid BSG0810NDIATMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : BSG0810NDIATMA1

tootja : Infineon Technologies

kirjeldus : MOSFET 2N-CH 25V 19A/39A 8TISON

seeria : OptiMOS™

Osa olek : Active

FET tüüp : 2 N-Channel (Dual) Asymmetrical

FET funktsioon : Logic Level Gate, 4.5V Drive

Tühjendage toitepingele (Vdss) : 25V

Praegune - pidev äravool (id) @ 25 ° C : 19A, 39A

Rds sees (max) @ id, Vgs : 3 mOhm @ 20A, 10V

Vgs (th) (maksimaalselt) @ id : 2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 8.4nC @ 4.5V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1040pF @ 12V

Võimsus - max : 2.5W

Töötemperatuur : -55°C ~ 155°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : 8-PowerTDFN

Tarnija seadme pakett : PG-TISON-8

kaal : -

tingimus : Uus ja originaal

seotud lingid : BSG08 , BSG0810

dokumendid BSG0810NDIATMA1

andmelehe : BSG0810NDIATMA1.pdf

Seotud tooted BSG0810NDIATMA1 Infineon Technologies

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