RN1910FE(T5L,F,T) - TRANS 2NPN PREBIAS 0.1W ES6

Tootja arv

RN1910FE(T5L,F,T)

Sisemine osa number

ABC-RN1910FE(T5L,F,T)

tootja

Toshiba Semiconductor and Storage

Lühikirjeldus

TRANS 2NPN PREBIAS 0.1W ES6

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

62336 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on RN1910FE(T5L,F,T) laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid RN1910FE(T5L,F,T)

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : RN1910FE(T5L,F,T)

tootja : Toshiba Semiconductor and Storage

kirjeldus : TRANS 2NPN PREBIAS 0.1W ES6

seeria : -

Osa olek : Active

Transistori tüüp : 2 NPN - Pre-Biased (Dual)

Praegune - koguja (Ic) (maksimaalselt) : 100mA

Pinge - kollektori emitteri jaotus (max) : 50V

Takisti - alus (R1) : 4.7 kOhms

Takisti - emitteri alus (R2) : -

Alalisvoolu võimendus (hFE) (min) @ Ic, Vce : 120 @ 1mA, 5V

Vce küllastus (maksimaalselt) @ Ib, Ic : 300mV @ 250µA, 5mA

Praegune - koguja väljalülitus (max) : 100nA (ICBO)

Sagedus - üleminek : 250MHz

Võimsus - max : 100mW

Paigaldus tüüp : Surface Mount

Pakett / kohver : SOT-563, SOT-666

Tarnija seadme pakett : ES6

kaal : -

tingimus : Uus ja originaal

seotud lingid : RN191 , RN1910FE

dokumendid RN1910FE(T5L,F,T)

andmelehe : RN1910FE(T5L,F,T).pdf

Seotud tooted RN1910FE(T5L,F,T) Toshiba Semiconductor and Storage

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