FQD12N20LTM-F085 - MOSFET N-CH 200V 9A DPAK

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FQD12N20LTM-F085

Sisemine osa number

ABC-FQD12N20LTM-F085

tootja

ON Semiconductor

Lühikirjeldus

MOSFET N-CH 200V 9A DPAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

685916 Pieces

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~~USD 0.477205~~

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ABC Semiconductor on FQD12N20LTM-F085 laos müüa.

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spetsifikatsioonid FQD12N20LTM-F085

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Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FQD12N20LTM-F085

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 200V 9A DPAK

seeria : Automotive, AEC-Q101, QFET®

Osa olek : Not For New Designs

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 200V

Praegune - pidev äravool (id) @ 25 ° C : 9A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 5V, 10V

Rds sees (max) @ id, Vgs : 280 mOhm @ 4.5A, 10V

Vgs (th) (maksimaalselt) @ id : 2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 21nC @ 5V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1080pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 2.5W (Ta), 55W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : D-Pak

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : FQD12 , FQD12N20

dokumendid FQD12N20LTM-F085

andmelehe : FQD12N20LTM-F085.pdf

Seotud tooted FQD12N20LTM-F085 ON Semiconductor

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