PHD18NQ10T,118 - MOSFET N-CH 100V 18A DPAK

Tootja arv

PHD18NQ10T,118

Sisemine osa number

ABC-PHD18NQ10T,118

tootja

NXP USA Inc.

Lühikirjeldus

MOSFET N-CH 100V 18A DPAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

45721 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on PHD18NQ10T,118 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid PHD18NQ10T,118

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : PHD18NQ10T,118

tootja : NXP USA Inc.

kirjeldus : MOSFET N-CH 100V 18A DPAK

seeria : TrenchMOS™

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 18A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 90 mOhm @ 9A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 21nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 633pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 79W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : DPAK

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : PHD1 , PHD18NQ

dokumendid PHD18NQ10T,118

andmelehe : PHD18NQ10T,118.pdf

Seotud tooted PHD18NQ10T,118 NXP USA Inc.

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