DMT6009LFG-13 - MOSFET N-CH 60V 11A POWERDI3333-

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DMT6009LFG-13

Sisemine osa number

ABC-DMT6009LFG-13

tootja

Diodes Incorporated

Lühikirjeldus

MOSFET N-CH 60V 11A POWERDI3333-

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1254106 Pieces

Viide Hind

~~USD 0.261~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on DMT6009LFG-13 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid DMT6009LFG-13

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : DMT6009LFG-13

tootja : Diodes Incorporated

kirjeldus : MOSFET N-CH 60V 11A POWERDI3333-

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 11A (Ta), 34A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 10 mOhm @ 13.5A, 10V

Vgs (th) (maksimaalselt) @ id : 2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 33.5nC @ 10V

VG (maksimaalselt) : ±16V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1925pF @ 30V

FET funktsioon : -

Võimsuse hajumine (max) : 2.08W (Ta), 19.2W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PowerDI3333-8

Pakett / kohver : 8-PowerWDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : DMT6 , DMT600

dokumendid DMT6009LFG-13

andmelehe : DMT6009LFG-13.pdf

Seotud tooted DMT6009LFG-13 Diodes Incorporated

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