SIE802DF-T1-E3 - MOSFET N-CH 30V 60A 10-POLARPAK

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SIE802DF-T1-E3

Sisemine osa number

ABC-SIE802DF-T1-E3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 30V 60A 10-POLARPAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

314909 Pieces

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~~USD 1.039395~~

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ABC Semiconductor on SIE802DF-T1-E3 laos müüa.

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spetsifikatsioonid SIE802DF-T1-E3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SIE802DF-T1-E3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 30V 60A 10-POLARPAK

seeria : TrenchFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 60A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 1.9 mOhm @ 23.6A, 10V

Vgs (th) (maksimaalselt) @ id : 2.7V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 160nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 7000pF @ 15V

FET funktsioon : -

Võimsuse hajumine (max) : 5.2W (Ta), 125W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 10-PolarPAK® (L)

Pakett / kohver : 10-PolarPAK® (L)

kaal : -

tingimus : Uus ja originaal

seotud lingid : SIE8 , SIE802D

dokumendid SIE802DF-T1-E3

andmelehe : SIE802DF-T1-E3.pdf

Seotud tooted SIE802DF-T1-E3 Vishay Siliconix

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