SI4900DY-T1-GE3 - MOSFET 2N-CH 60V 5.3A 8-SOIC

Tootja arv

SI4900DY-T1-GE3

Sisemine osa number

ABC-SI4900DY-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET 2N-CH 60V 5.3A 8-SOIC

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1180816 Pieces

Viide Hind

~~USD 0.2772~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI4900DY-T1-GE3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SI4900DY-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI4900DY-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET 2N-CH 60V 5.3A 8-SOIC

seeria : TrenchFET®

Osa olek : Active

FET tüüp : 2 N-Channel (Dual)

FET funktsioon : Logic Level Gate

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 5.3A

Rds sees (max) @ id, Vgs : 58 mOhm @ 4.3A, 10V

Vgs (th) (maksimaalselt) @ id : 3V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 20nC @ 10V

Sisendmahtuvus (Ciss) (Max) @ Vds : 665pF @ 15V

Võimsus - max : 3.1W

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : 8-SOIC (0.154", 3.90mm Width)

Tarnija seadme pakett : 8-SO

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI490 , SI4900D

dokumendid SI4900DY-T1-GE3

andmelehe : SI4900DY-T1-GE3.pdf

Seotud tooted SI4900DY-T1-GE3 Vishay Siliconix

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