IPI024N06N3GHKSA1 - MOSFET N-CH 60V 120A TO262-3

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IPI024N06N3GHKSA1

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 60V 120A TO262-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

33472 Pieces

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spetsifikatsioonid IPI024N06N3GHKSA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPI024N06N3GHKSA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 60V 120A TO262-3

seeria : OptiMOS™

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 120A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 2.4 mOhm @ 100A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 196µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 275nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 23000pF @ 30V

FET funktsioon : -

Võimsuse hajumine (max) : 250W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : PG-TO262-3

Pakett / kohver : TO-262-3 Long Leads, I²Pak, TO-262AA

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPI02 , IPI024N0

dokumendid IPI024N06N3GHKSA1

andmelehe : IPI024N06N3GHKSA1.pdf

Seotud tooted IPI024N06N3GHKSA1 Infineon Technologies

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