IXFH12N100F - MOSFET N-CH 1000V 12A TO-247AD

Tootja arv

IXFH12N100F

Sisemine osa number

ABC-IXFH12N100F

tootja

IXYS-RF

Lühikirjeldus

MOSFET N-CH 1000V 12A TO-247AD

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

82368 Pieces

Viide Hind

~~USD 4.540835~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IXFH12N100F laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IXFH12N100F

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IXFH12N100F

tootja : IXYS-RF

kirjeldus : MOSFET N-CH 1000V 12A TO-247AD

seeria : HiPerRF™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 1000V

Praegune - pidev äravool (id) @ 25 ° C : 12A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 1.05 Ohm @ 6A, 10V

Vgs (th) (maksimaalselt) @ id : 5.5V @ 4mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 77nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 2700pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 300W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-247AD (IXFH)

Pakett / kohver : TO-3P-3 Full Pack

kaal : -

tingimus : Uus ja originaal

seotud lingid : IXF , IXFH1

dokumendid IXFH12N100F

andmelehe : IXFH12N100F.pdf

Seotud tooted IXFH12N100F IXYS-RF

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