RD3H080SPFRATL - RD3H080SPFRA IS A POWER MOSFET W

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RD3H080SPFRATL

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ABC-RD3H080SPFRATL

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Rohm Semiconductor

Lühikirjeldus

RD3H080SPFRA IS A POWER MOSFET W

RoHS-staatus

Pliivaba / RoHS Vastavuses

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1-2 päeva

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1181418 Pieces

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~~USD 0.27706~~

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ABC Semiconductor on RD3H080SPFRATL laos müüa.

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spetsifikatsioonid RD3H080SPFRATL

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : RD3H080SPFRATL

tootja : Rohm Semiconductor

kirjeldus : RD3H080SPFRA IS A POWER MOSFET W

seeria : Automotive, AEC-Q101

Osa olek : Active

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 45V

Praegune - pidev äravool (id) @ 25 ° C : 8A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 4V, 10V

Rds sees (max) @ id, Vgs : 91 mOhm @ 8A, 10V

Vgs (th) (maksimaalselt) @ id : 3V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 9nC @ 5V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1000pF @ 10V

FET funktsioon : -

Võimsuse hajumine (max) : 15W (Tc)

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-252

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : RD3H , RD3H080

dokumendid RD3H080SPFRATL

andmelehe : RD3H080SPFRATL.pdf

Seotud tooted RD3H080SPFRATL Rohm Semiconductor

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