FF23MR12W1M1B11BOMA1 - MOSFET 2 N-CH 1200V 50A MODULE

Tootja arv

FF23MR12W1M1B11BOMA1

Sisemine osa number

ABC-FF23MR12W1M1B11BOMA1

tootja

Infineon Technologies

Lühikirjeldus

MOSFET 2 N-CH 1200V 50A MODULE

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

48909 Pieces

Viide Hind

~~USD 48.705~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on FF23MR12W1M1B11BOMA1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid FF23MR12W1M1B11BOMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FF23MR12W1M1B11BOMA1

tootja : Infineon Technologies

kirjeldus : MOSFET 2 N-CH 1200V 50A MODULE

seeria : CoolSiC™

Osa olek : Active

FET tüüp : 2 N-Channel (Dual)

FET funktsioon : Silicon Carbide (SiC)

Tühjendage toitepingele (Vdss) : 1200V (1.2kV)

Praegune - pidev äravool (id) @ 25 ° C : 50A

Rds sees (max) @ id, Vgs : 23 mOhm @ 50A, 15V

Vgs (th) (maksimaalselt) @ id : 5.55V @ 20mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 125nC @ 15V

Sisendmahtuvus (Ciss) (Max) @ Vds : 3950pF @ 800V

Võimsus - max : 20mW

Töötemperatuur : -40°C ~ 150°C (TJ)

Paigaldus tüüp : Chassis Mount

Pakett / kohver : Module

Tarnija seadme pakett : Module

kaal : -

tingimus : Uus ja originaal

seotud lingid : FF23MR , FF23MR12W1

dokumendid FF23MR12W1M1B11BOMA1

andmelehe : FF23MR12W1M1B11BOMA1.pdf

Seotud tooted FF23MR12W1M1B11BOMA1 Infineon Technologies

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