FDB0260N1007L - MOSFET N-CH 100V 200A D2PAK

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FDB0260N1007L

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ABC-FDB0260N1007L

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ON Semiconductor

Lühikirjeldus

MOSFET N-CH 100V 200A D2PAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

191368 Pieces

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~~USD 1.954755~~

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ABC Semiconductor on FDB0260N1007L laos müüa.

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spetsifikatsioonid FDB0260N1007L

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FDB0260N1007L

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 100V 200A D2PAK

seeria : PowerTrench®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 200A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 2.6 mOhm @ 27A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 118nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 8545pF @ 50V

FET funktsioon : -

Võimsuse hajumine (max) : 3.8W (Ta), 250W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : D²PAK (TO-263)

Pakett / kohver : TO-263-7, D²Pak (6 Leads + Tab)

kaal : -

tingimus : Uus ja originaal

seotud lingid : FDB0 , FDB026

dokumendid FDB0260N1007L

andmelehe : FDB0260N1007L.pdf

Seotud tooted FDB0260N1007L ON Semiconductor

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