BSC200P03LSGAUMA1 - MOSFET P-CH 30V 12.5A TDSON-8

Tootja arv

BSC200P03LSGAUMA1

Sisemine osa number

ABC-BSC200P03LSGAUMA1

tootja

Infineon Technologies

Lühikirjeldus

MOSFET P-CH 30V 12.5A TDSON-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

38144 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on BSC200P03LSGAUMA1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid BSC200P03LSGAUMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : BSC200P03LSGAUMA1

tootja : Infineon Technologies

kirjeldus : MOSFET P-CH 30V 12.5A TDSON-8

seeria : OptiMOS™

Osa olek : Obsolete

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 9.9A (Ta), 12.5A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 20 mOhm @ 12.5A, 10V

Vgs (th) (maksimaalselt) @ id : 2.2V @ 100µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 48.5nC @ 10V

VG (maksimaalselt) : ±25V

Sisendmahtuvus (Ciss) (Max) @ Vds : 2430pF @ 15V

FET funktsioon : -

Võimsuse hajumine (max) : 2.5W (Ta), 63W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-TDSON-8

Pakett / kohver : 8-PowerTDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : BSC20 , BSC200P0

dokumendid BSC200P03LSGAUMA1

andmelehe : BSC200P03LSGAUMA1.pdf

Seotud tooted BSC200P03LSGAUMA1 Infineon Technologies

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