BSC010NE2LSIATMA1 - MOSFET N-CH 25V 38A TDSON-8

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BSC010NE2LSIATMA1

Sisemine osa number

ABC-BSC010NE2LSIATMA1

tootja

Infineon Technologies

Lühikirjeldus

MOSFET N-CH 25V 38A TDSON-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

813841 Pieces

Viide Hind

~~USD 0.40219~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on BSC010NE2LSIATMA1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid BSC010NE2LSIATMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : BSC010NE2LSIATMA1

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 25V 38A TDSON-8

seeria : OptiMOS™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 25V

Praegune - pidev äravool (id) @ 25 ° C : 38A (Ta), 100A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 1.05 mOhm @ 30A, 10V

Vgs (th) (maksimaalselt) @ id : 2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 59nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 4200pF @ 12V

FET funktsioon : -

Võimsuse hajumine (max) : 2.5W (Ta), 96W (Tc)

Töötemperatuur : -

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-TDSON-8

Pakett / kohver : 8-PowerTDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : BSC01 , BSC010NE

dokumendid BSC010NE2LSIATMA1

andmelehe : BSC010NE2LSIATMA1.pdf

Seotud tooted BSC010NE2LSIATMA1 Infineon Technologies

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