AS4C16M16S-6BIN - IC DRAM 256M PARALLEL 54TFBGA

Tootja arv

AS4C16M16S-6BIN

Sisemine osa number

ABC-AS4C16M16S-6BIN

tootja

Alliance Memory, Inc.

Lühikirjeldus

IC DRAM 256M PARALLEL 54TFBGA

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

100080 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on AS4C16M16S-6BIN laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid AS4C16M16S-6BIN

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : AS4C16M16S-6BIN

tootja : Alliance Memory, Inc.

kirjeldus : IC DRAM 256M PARALLEL 54TFBGA

seeria : -

Osa olek : Obsolete

Mälu tüüp : Volatile

Mälu vorming : DRAM

Tehnoloogia : SDRAM

Mälu suurus : 256Mb (16M x 16)

Kella sagedus : 166MHz

Kirjutage tsükli aeg - sõna, leht : 12ns

Juurdepääsu aeg : 5.4ns

Mäluliides : Parallel

Pinge - toide : 3V ~ 3.6V

Töötemperatuur : -40°C ~ 85°C (TA)

Paigaldus tüüp : Surface Mount

Pakett / kohver : 54-TFBGA

Tarnija seadme pakett : 54-TFBGA (8x8)

kaal : -

tingimus : Uus ja originaal

seotud lingid : AS4C1 , AS4C16M

dokumendid AS4C16M16S-6BIN

andmelehe : AS4C16M16S-6BIN.pdf

Seotud tooted AS4C16M16S-6BIN Alliance Memory, Inc.

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