IPD60R1K4C6 - MOSFET N-CH 600V 3.2A TO252-3

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IPD60R1K4C6

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ABC-IPD60R1K4C6

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 600V 3.2A TO252-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

97832 Pieces

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ABC Semiconductor on IPD60R1K4C6 laos müüa.

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spetsifikatsioonid IPD60R1K4C6

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPD60R1K4C6

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 600V 3.2A TO252-3

seeria : CoolMOS™

Osa olek : Discontinued at Digi-Key

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 3.2A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 1.4 Ohm @ 1.1A, 10V

Vgs (th) (maksimaalselt) @ id : 3.5V @ 90µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 9.4nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 200pF @ 100V

FET funktsioon : -

Võimsuse hajumine (max) : 28.4W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PG-TO252-3

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPD , IPD60

dokumendid IPD60R1K4C6

andmelehe : IPD60R1K4C6.pdf

Seotud tooted IPD60R1K4C6 Infineon Technologies

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