SIZF920DT-T1-GE3 - MOSFET DL N-CH 30V POWERPAIR 6X5

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SIZF920DT-T1-GE3

Sisemine osa number

ABC-SIZF920DT-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET DL N-CH 30V POWERPAIR 6X5

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

720321 Pieces

Viide Hind

~~USD 0.45441~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SIZF920DT-T1-GE3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SIZF920DT-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SIZF920DT-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET DL N-CH 30V POWERPAIR 6X5

seeria : TrenchFET® Gen IV

Osa olek : Active

FET tüüp : 2 N-Channel (Dual), Schottky

FET funktsioon : Standard

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)

Rds sees (max) @ id, Vgs : 3.07 mOhm @ 10A, 10V, 1.05 mOhm @ 10A, 10V

Vgs (th) (maksimaalselt) @ id : 2.4V @ 250µA, 2.2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 29nC @ 10V, 125nC @ 10V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1300pF @ 15V, 5230pF @ 15V

Võimsus - max : 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : 8-PowerWDFN

Tarnija seadme pakett : 8-PowerPair® (6x5)

kaal : -

tingimus : Uus ja originaal

seotud lingid : SIZF9 , SIZF920D

dokumendid SIZF920DT-T1-GE3

andmelehe : SIZF920DT-T1-GE3.pdf

Seotud tooted SIZF920DT-T1-GE3 Vishay Siliconix

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