RJK60S7DPK-M0#T0 - MOSFET N-CH 600V 30A TO-3PSG

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RJK60S7DPK-M0#T0

Sisemine osa number

ABC-RJK60S7DPK-M0#T0

tootja

Renesas Electronics America

Lühikirjeldus

MOSFET N-CH 600V 30A TO-3PSG

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

106872 Pieces

Viide Hind

~~USD 3.5~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on RJK60S7DPK-M0#T0 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid RJK60S7DPK-M0#T0

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : RJK60S7DPK-M0#T0

tootja : Renesas Electronics America

kirjeldus : MOSFET N-CH 600V 30A TO-3PSG

seeria : -

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 30A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 125 mOhm @ 15A, 10V

Vgs (th) (maksimaalselt) @ id : -

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 39nC @ 10V

VG (maksimaalselt) : +30V, -20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 2300pF @ 25V

FET funktsioon : Super Junction

Võimsuse hajumine (max) : 227.2W (Tc)

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-3PSG

Pakett / kohver : TO-3P-3, SC-65-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : RJK60 , RJK60S7D

dokumendid RJK60S7DPK-M0#T0

andmelehe : RJK60S7DPK-M0#T0.pdf

Seotud tooted RJK60S7DPK-M0#T0 Renesas Electronics America

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