SI5915DC-T1-E3 - MOSFET 2P-CH 8V 3.4A 1206-8

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SI5915DC-T1-E3

Sisemine osa number

ABC-SI5915DC-T1-E3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET 2P-CH 8V 3.4A 1206-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

54080 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI5915DC-T1-E3 laos müüa.

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spetsifikatsioonid SI5915DC-T1-E3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI5915DC-T1-E3

tootja : Vishay Siliconix

kirjeldus : MOSFET 2P-CH 8V 3.4A 1206-8

seeria : TrenchFET®

Osa olek : Obsolete

FET tüüp : 2 P-Channel (Dual)

FET funktsioon : Logic Level Gate

Tühjendage toitepingele (Vdss) : 8V

Praegune - pidev äravool (id) @ 25 ° C : 3.4A

Rds sees (max) @ id, Vgs : 70 mOhm @ 3.4A, 4.5V

Vgs (th) (maksimaalselt) @ id : 450mV @ 250µA (Min)

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 9nC @ 4.5V

Sisendmahtuvus (Ciss) (Max) @ Vds : -

Võimsus - max : 1.1W

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : 8-SMD, Flat Lead

Tarnija seadme pakett : 1206-8 ChipFET™

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI59 , SI5915D

dokumendid SI5915DC-T1-E3

andmelehe : SI5915DC-T1-E3.pdf

Seotud tooted SI5915DC-T1-E3 Vishay Siliconix

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