SI7106DN-T1-GE3 - MOSFET N-CH 20V 12.5A 1212-8

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SI7106DN-T1-GE3

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ABC-SI7106DN-T1-GE3

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Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 20V 12.5A 1212-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1072463 Pieces

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~~USD 0.305205~~

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ABC Semiconductor on SI7106DN-T1-GE3 laos müüa.

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spetsifikatsioonid SI7106DN-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI7106DN-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 20V 12.5A 1212-8

seeria : TrenchFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 12.5A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 2.5V, 4.5V

Rds sees (max) @ id, Vgs : 6.2 mOhm @ 19.5A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 27nC @ 4.5V

VG (maksimaalselt) : ±12V

Sisendmahtuvus (Ciss) (Max) @ Vds : -

FET funktsioon : -

Võimsuse hajumine (max) : 1.5W (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PowerPAK® 1212-8

Pakett / kohver : PowerPAK® 1212-8

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI710 , SI7106D

dokumendid SI7106DN-T1-GE3

andmelehe : SI7106DN-T1-GE3.pdf

Seotud tooted SI7106DN-T1-GE3 Vishay Siliconix

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