IXFA130N10T2 - MOSFET N-CH 100V 130A TO-263AA

Tootja arv

IXFA130N10T2

Sisemine osa number

ABC-IXFA130N10T2

tootja

IXYS

Lühikirjeldus

MOSFET N-CH 100V 130A TO-263AA

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

215509 Pieces

Viide Hind

~~USD 1.5188~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IXFA130N10T2 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IXFA130N10T2

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IXFA130N10T2

tootja : IXYS

kirjeldus : MOSFET N-CH 100V 130A TO-263AA

seeria : GigaMOS™, HiPerFET™, TrenchT2™

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 130A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 9.1 mOhm @ 65A, 10V

Vgs (th) (maksimaalselt) @ id : 4.5V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 130nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 6600pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 360W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-263 (IXFA)

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : IXFA , IXFA13

dokumendid IXFA130N10T2

andmelehe : IXFA130N10T2.pdf

Seotud tooted IXFA130N10T2 IXYS

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