SI2319DDS-T1-GE3 - MOSFET P-CHAN 40V

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SI2319DDS-T1-GE3

Sisemine osa number

ABC-SI2319DDS-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET P-CHAN 40V

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

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3358208 Pieces

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ABC Semiconductor on SI2319DDS-T1-GE3 laos müüa.

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spetsifikatsioonid SI2319DDS-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI2319DDS-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET P-CHAN 40V

seeria : TrenchFET® Gen III

Osa olek : Active

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 40V

Praegune - pidev äravool (id) @ 25 ° C : 2.7A (Ta), 3.6A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 75 mOhm @ 2.7A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 19nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 650pF @ 20V

FET funktsioon : -

Võimsuse hajumine (max) : 1W (Ta), 1.7W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : SOT-23-3 (TO-236)

Pakett / kohver : TO-236-3, SC-59, SOT-23-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI231 , SI2319DD

dokumendid SI2319DDS-T1-GE3

andmelehe : SI2319DDS-T1-GE3.pdf

Seotud tooted SI2319DDS-T1-GE3 Vishay Siliconix

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