PMFPB8032XP,115 - MOSFET P-CH 20V 2.7A HUSON6

Tootja arv

PMFPB8032XP,115

Sisemine osa number

ABC-PMFPB8032XP,115

tootja

Nexperia USA Inc.

Lühikirjeldus

MOSFET P-CH 20V 2.7A HUSON6

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

2217642 Pieces

Viide Hind

~~USD 0.1476~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on PMFPB8032XP,115 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid PMFPB8032XP,115

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : PMFPB8032XP,115

tootja : Nexperia USA Inc.

kirjeldus : MOSFET P-CH 20V 2.7A HUSON6

seeria : -

Osa olek : Active

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 2.7A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V

Rds sees (max) @ id, Vgs : 102 mOhm @ 2.7A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 8.6nC @ 4.5V

VG (maksimaalselt) : ±12V

Sisendmahtuvus (Ciss) (Max) @ Vds : 550pF @ 10V

FET funktsioon : Schottky Diode (Isolated)

Võimsuse hajumine (max) : 485mW (Ta), 6.25W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 6-HUSON-EP (2x2)

Pakett / kohver : 6-UDFN Exposed Pad

kaal : -

tingimus : Uus ja originaal

seotud lingid : PMFPB , PMFPB80

dokumendid PMFPB8032XP,115

andmelehe : PMFPB8032XP,115.pdf

Seotud tooted PMFPB8032XP,115 Nexperia USA Inc.

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