SI4409DY-T1-GE3 - MOSFET P-CH 150V 1.3A 8-SOIC

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SI4409DY-T1-GE3

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ABC-SI4409DY-T1-GE3

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Vishay Siliconix

Lühikirjeldus

MOSFET P-CH 150V 1.3A 8-SOIC

RoHS-staatus

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Tarne aeg

1-2 päeva

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ABC Semiconductor on SI4409DY-T1-GE3 laos müüa.

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spetsifikatsioonid SI4409DY-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI4409DY-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET P-CH 150V 1.3A 8-SOIC

seeria : TrenchFET®

Osa olek : Obsolete

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 150V

Praegune - pidev äravool (id) @ 25 ° C : 1.3A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 6V, 10V

Rds sees (max) @ id, Vgs : 1.2 Ohm @ 500mA, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 12nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 332pF @ 50V

FET funktsioon : -

Võimsuse hajumine (max) : 2.2W (Ta), 4.6W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 8-SO

Pakett / kohver : 8-SOIC (0.154", 3.90mm Width)

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI440 , SI4409D

dokumendid SI4409DY-T1-GE3

andmelehe : SI4409DY-T1-GE3.pdf

Seotud tooted SI4409DY-T1-GE3 Vishay Siliconix

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