SIHB12N50E-GE3 - MOSFET N-CH 500V 10.5A TO-263

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SIHB12N50E-GE3

Sisemine osa number

ABC-SIHB12N50E-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 500V 10.5A TO-263

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

248906 Pieces

Viide Hind

~~USD 1.315~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SIHB12N50E-GE3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SIHB12N50E-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SIHB12N50E-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 500V 10.5A TO-263

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 500V

Praegune - pidev äravool (id) @ 25 ° C : 10.5A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 380 mOhm @ 6A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 50nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 886pF @ 100V

FET funktsioon : -

Võimsuse hajumine (max) : 114W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : D²PAK (TO-263)

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : SIHB , SIHB12N

dokumendid SIHB12N50E-GE3

andmelehe : SIHB12N50E-GE3.pdf

Seotud tooted SIHB12N50E-GE3 Vishay Siliconix

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