RJK6018DPM-00#T1 - MOSFET N-CH 600V 30A TO3PFM

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RJK6018DPM-00#T1

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ABC-RJK6018DPM-00#T1

tootja

Renesas Electronics America

Lühikirjeldus

MOSFET N-CH 600V 30A TO3PFM

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

69824 Pieces

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~~USD 0~~

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ABC Semiconductor on RJK6018DPM-00#T1 laos müüa.

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spetsifikatsioonid RJK6018DPM-00#T1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : RJK6018DPM-00#T1

tootja : Renesas Electronics America

kirjeldus : MOSFET N-CH 600V 30A TO3PFM

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 30A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 235 mOhm @ 15A, 10V

Vgs (th) (maksimaalselt) @ id : -

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 92nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 4100pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 60W (Tc)

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-3PFM

Pakett / kohver : TO-3PFM, SC-93-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : RJK60 , RJK6018D

dokumendid RJK6018DPM-00#T1

andmelehe : RJK6018DPM-00#T1.pdf

Seotud tooted RJK6018DPM-00#T1 Renesas Electronics America

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