SI5414DC-T1-GE3 - MOSFET N-CH 20V 6A 1206-8

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SI5414DC-T1-GE3

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ABC-SI5414DC-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 20V 6A 1206-8

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

2160200 Pieces

Viide Hind

~~USD 0.151525~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SI5414DC-T1-GE3 laos müüa.

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spetsifikatsioonid SI5414DC-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI5414DC-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 20V 6A 1206-8

seeria : TrenchFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 20V

Praegune - pidev äravool (id) @ 25 ° C : 6A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 2.5V, 4.5V

Rds sees (max) @ id, Vgs : 17 mOhm @ 9.9A, 4.5V

Vgs (th) (maksimaalselt) @ id : 1.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 41nC @ 10V

VG (maksimaalselt) : ±12V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1500pF @ 10V

FET funktsioon : -

Võimsuse hajumine (max) : 2.5W (Ta), 6.3W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 1206-8 ChipFET™

Pakett / kohver : 8-SMD, Flat Lead

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI541 , SI5414D

dokumendid SI5414DC-T1-GE3

andmelehe : SI5414DC-T1-GE3.pdf

Seotud tooted SI5414DC-T1-GE3 Vishay Siliconix

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