IRFR9N20DTRLPBF - MOSFET N-CH 200V 9.4A DPAK

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IRFR9N20DTRLPBF

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ABC-IRFR9N20DTRLPBF

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 200V 9.4A DPAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1360303 Pieces

Viide Hind

~~USD 0.240625~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on IRFR9N20DTRLPBF laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid IRFR9N20DTRLPBF

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IRFR9N20DTRLPBF

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 200V 9.4A DPAK

seeria : HEXFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 200V

Praegune - pidev äravool (id) @ 25 ° C : 9.4A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 380 mOhm @ 5.6A, 10V

Vgs (th) (maksimaalselt) @ id : 5.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 27nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 560pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 86W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : D-Pak

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : IRFR9 , IRFR9N2

dokumendid IRFR9N20DTRLPBF

andmelehe : IRFR9N20DTRLPBF.pdf

Seotud tooted IRFR9N20DTRLPBF Infineon Technologies

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