BUK9E1R6-30E,127 - MOSFET N-CH 30V 120A I2PAK

Tootja arv

BUK9E1R6-30E,127

Sisemine osa number

ABC-BUK9E1R6-30E,127

tootja

NXP USA Inc.

Lühikirjeldus

MOSFET N-CH 30V 120A I2PAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

45955 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on BUK9E1R6-30E,127 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid BUK9E1R6-30E,127

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : BUK9E1R6-30E,127

tootja : NXP USA Inc.

kirjeldus : MOSFET N-CH 30V 120A I2PAK

seeria : TrenchMOS™

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 120A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 5V, 10V

Rds sees (max) @ id, Vgs : 1.4 mOhm @ 25A, 10V

Vgs (th) (maksimaalselt) @ id : 2.1V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 113nC @ 5V

VG (maksimaalselt) : ±10V

Sisendmahtuvus (Ciss) (Max) @ Vds : 16150pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 349W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : I2PAK

Pakett / kohver : TO-262-3 Long Leads, I²Pak, TO-262AA

kaal : -

tingimus : Uus ja originaal

seotud lingid : BUK9E , BUK9E1R6

dokumendid BUK9E1R6-30E,127

andmelehe : BUK9E1R6-30E,127.pdf

Seotud tooted BUK9E1R6-30E,127 NXP USA Inc.

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