SQS966ENW-T1_GE3 - MOSFET N-CHAN 60V

Tootja arv

SQS966ENW-T1_GE3

Sisemine osa number

ABC-SQS966ENW-T1_GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CHAN 60V

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1529402 Pieces

Viide Hind

~~USD 0.21402~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on SQS966ENW-T1_GE3 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid SQS966ENW-T1_GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SQS966ENW-T1_GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CHAN 60V

seeria : Automotive, AEC-Q101, TrenchFET®

Osa olek : Active

FET tüüp : 2 N-Channel (Dual)

FET funktsioon : Standard

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 6A (Tc)

Rds sees (max) @ id, Vgs : 36 mOhm @ 1.25A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 8.8nC @ 10V

Sisendmahtuvus (Ciss) (Max) @ Vds : 572pF @ 25V

Võimsus - max : 27.8W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : PowerPAK® 1212-8W

Tarnija seadme pakett : PowerPAK® 1212-8W

kaal : -

tingimus : Uus ja originaal

seotud lingid : SQS96 , SQS966EN

dokumendid SQS966ENW-T1_GE3

andmelehe : SQS966ENW-T1_GE3.pdf

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