FDB0165N807L - MOSFET N-CH 80V 310A TO263

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FDB0165N807L

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ABC-FDB0165N807L

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ON Semiconductor

Lühikirjeldus

MOSFET N-CH 80V 310A TO263

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

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202648 Pieces

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~~USD 1.845865~~

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ABC Semiconductor on FDB0165N807L laos müüa.

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spetsifikatsioonid FDB0165N807L

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FDB0165N807L

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 80V 310A TO263

seeria : PowerTrench®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 80V

Praegune - pidev äravool (id) @ 25 ° C : 310A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 1.6 mOhm @ 36A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 304nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 23660pF @ 40V

FET funktsioon : -

Võimsuse hajumine (max) : 3.8W (Ta), 300W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : D²PAK (TO-263)

Pakett / kohver : TO-263-7, D²Pak (6 Leads + Tab)

kaal : -

tingimus : Uus ja originaal

seotud lingid : FDB0 , FDB016

dokumendid FDB0165N807L

andmelehe : FDB0165N807L.pdf

Seotud tooted FDB0165N807L ON Semiconductor

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