RJL6012DPE-00#J3 - MOSFET N-CH 600V 10A LDPAK

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RJL6012DPE-00#J3

Sisemine osa number

ABC-RJL6012DPE-00#J3

tootja

Renesas Electronics America

Lühikirjeldus

MOSFET N-CH 600V 10A LDPAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

70016 Pieces

Viide Hind

~~USD 0~~

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- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on RJL6012DPE-00#J3 laos müüa.

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spetsifikatsioonid RJL6012DPE-00#J3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : RJL6012DPE-00#J3

tootja : Renesas Electronics America

kirjeldus : MOSFET N-CH 600V 10A LDPAK

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 10A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 1.1 Ohm @ 5A, 10V

Vgs (th) (maksimaalselt) @ id : -

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 28nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1050pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 100W (Tc)

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 4-LDPAK

Pakett / kohver : SC-83

kaal : -

tingimus : Uus ja originaal

seotud lingid : RJL60 , RJL6012D

dokumendid RJL6012DPE-00#J3

andmelehe : RJL6012DPE-00#J3.pdf

Seotud tooted RJL6012DPE-00#J3 Renesas Electronics America

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