NP109N055PUJ-E1B-AY - MOSFET N-CH 55V MP-25ZP/TO-263

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NP109N055PUJ-E1B-AY

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ABC-NP109N055PUJ-E1B-AY

tootja

Renesas Electronics America

Lühikirjeldus

MOSFET N-CH 55V MP-25ZP/TO-263

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

50368 Pieces

Viide Hind

~~USD 0~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on NP109N055PUJ-E1B-AY laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid NP109N055PUJ-E1B-AY

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : NP109N055PUJ-E1B-AY

tootja : Renesas Electronics America

kirjeldus : MOSFET N-CH 55V MP-25ZP/TO-263

seeria : -

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 55V

Praegune - pidev äravool (id) @ 25 ° C : 110A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 3.2 mOhm @ 55A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 180nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 10350pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 1.8W (Ta), 220W (Tc)

Töötemperatuur : 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-263

Pakett / kohver : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

kaal : -

tingimus : Uus ja originaal

seotud lingid : NP109N , NP109N055

dokumendid NP109N055PUJ-E1B-AY

andmelehe : NP109N055PUJ-E1B-AY.pdf

Seotud tooted NP109N055PUJ-E1B-AY Renesas Electronics America

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