BSO615NGHUMA1 - MOSFET 2N-CH 60V 2.6A 8SOIC

Tootja arv

BSO615NGHUMA1

Sisemine osa number

ABC-BSO615NGHUMA1

tootja

Infineon Technologies

Lühikirjeldus

MOSFET 2N-CH 60V 2.6A 8SOIC

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1468376 Pieces

Viide Hind

~~USD 0.222915~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on BSO615NGHUMA1 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid BSO615NGHUMA1

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : BSO615NGHUMA1

tootja : Infineon Technologies

kirjeldus : MOSFET 2N-CH 60V 2.6A 8SOIC

seeria : SIPMOS®

Osa olek : Active

FET tüüp : 2 N-Channel (Dual)

FET funktsioon : Logic Level Gate

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 2.6A

Rds sees (max) @ id, Vgs : 150 mOhm @ 2.6A, 4.5V

Vgs (th) (maksimaalselt) @ id : 2V @ 20µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 20nC @ 10V

Sisendmahtuvus (Ciss) (Max) @ Vds : 380pF @ 25V

Võimsus - max : 2W

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Pakett / kohver : 8-SOIC (0.154", 3.90mm Width)

Tarnija seadme pakett : PG-DSO-8

kaal : -

tingimus : Uus ja originaal

seotud lingid : BSO6 , BSO615

dokumendid BSO615NGHUMA1

andmelehe : BSO615NGHUMA1.pdf

Seotud tooted BSO615NGHUMA1 Infineon Technologies

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