SI1499DH-T1-E3 - MOSFET P-CH 8V 1.6A SC70-6

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SI1499DH-T1-E3

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ABC-SI1499DH-T1-E3

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Vishay Siliconix

Lühikirjeldus

MOSFET P-CH 8V 1.6A SC70-6

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

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spetsifikatsioonid SI1499DH-T1-E3

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Osa number : SI1499DH-T1-E3

tootja : Vishay Siliconix

kirjeldus : MOSFET P-CH 8V 1.6A SC70-6

seeria : TrenchFET®

Osa olek : Active

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 8V

Praegune - pidev äravool (id) @ 25 ° C : 1.6A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 1.2V, 4.5V

Rds sees (max) @ id, Vgs : 78 mOhm @ 2A, 4.5V

Vgs (th) (maksimaalselt) @ id : 800mV @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 16nC @ 4.5V

VG (maksimaalselt) : ±5V

Sisendmahtuvus (Ciss) (Max) @ Vds : 650pF @ 4V

FET funktsioon : -

Võimsuse hajumine (max) : 2.5W (Ta), 2.78W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : SC-70-6 (SOT-363)

Pakett / kohver : 6-TSSOP, SC-88, SOT-363

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI14 , SI1499D

dokumendid SI1499DH-T1-E3

andmelehe : SI1499DH-T1-E3.pdf

Seotud tooted SI1499DH-T1-E3 Vishay Siliconix

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