FQD7N10LTM - MOSFET N-CH 100V 5.8A DPAK

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FQD7N10LTM

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ABC-FQD7N10LTM

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ON Semiconductor

Lühikirjeldus

MOSFET N-CH 100V 5.8A DPAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

2490103 Pieces

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~~USD 0.13145~~

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ABC Semiconductor on FQD7N10LTM laos müüa.

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spetsifikatsioonid FQD7N10LTM

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : FQD7N10LTM

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 100V 5.8A DPAK

seeria : QFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 5.8A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 5V, 10V

Rds sees (max) @ id, Vgs : 350 mOhm @ 2.9A, 10V

Vgs (th) (maksimaalselt) @ id : 2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 6nC @ 5V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 290pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 2.5W (Ta), 25W (Tc)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : D-Pak

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : FQD , FQD7N

dokumendid FQD7N10LTM

andmelehe : FQD7N10LTM.pdf

Seotud tooted FQD7N10LTM ON Semiconductor

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