NTD3055L170G - MOSFET N-CH 60V 9A DPAK

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NTD3055L170G

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ON Semiconductor

Lühikirjeldus

MOSFET N-CH 60V 9A DPAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

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1-2 päeva

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spetsifikatsioonid NTD3055L170G

kvaliteedi tagamise : 365 päeva garantii

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Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : NTD3055L170G

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 60V 9A DPAK

seeria : -

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 9A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 5V

Rds sees (max) @ id, Vgs : 170 mOhm @ 4.5A, 5V

Vgs (th) (maksimaalselt) @ id : 2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 10nC @ 5V

VG (maksimaalselt) : ±15V

Sisendmahtuvus (Ciss) (Max) @ Vds : 275pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 1.5W (Ta), 28.5W (Tj)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : DPAK

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : NTD3 , NTD305

dokumendid NTD3055L170G

andmelehe : NTD3055L170G.pdf

Seotud tooted NTD3055L170G ON Semiconductor

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