IPI26CN10N G - MOSFET N-CH 100V 35A TO262-3

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IPI26CN10N G

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ABC-IPI26CN10N G

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Infineon Technologies

Lühikirjeldus

MOSFET N-CH 100V 35A TO262-3

RoHS-staatus

Pliivaba / RoHS Vastavuses

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1-2 päeva

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spetsifikatsioonid IPI26CN10N G

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Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : IPI26CN10N G

tootja : Infineon Technologies

kirjeldus : MOSFET N-CH 100V 35A TO262-3

seeria : OptiMOS™

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 35A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 26 mOhm @ 35A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 39µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 31nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 2070pF @ 50V

FET funktsioon : -

Võimsuse hajumine (max) : 71W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : PG-TO262-3

Pakett / kohver : TO-262-3 Long Leads, I²Pak, TO-262AA

kaal : -

tingimus : Uus ja originaal

seotud lingid : IPI2 , IPI26C

dokumendid IPI26CN10N G

andmelehe : IPI26CN10N G.pdf

Seotud tooted IPI26CN10N G Infineon Technologies

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