DMP56D0UFB-7 - MOSFET P-CH 50V 200MA 3DFN

Tootja arv

DMP56D0UFB-7

Sisemine osa number

ABC-DMP56D0UFB-7

tootja

Diodes Incorporated

Lühikirjeldus

MOSFET P-CH 50V 200MA 3DFN

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

5089791 Pieces

Viide Hind

~~USD 0.06431~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on DMP56D0UFB-7 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid DMP56D0UFB-7

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : DMP56D0UFB-7

tootja : Diodes Incorporated

kirjeldus : MOSFET P-CH 50V 200MA 3DFN

seeria : -

Osa olek : Active

FET tüüp : P-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 50V

Praegune - pidev äravool (id) @ 25 ° C : 200mA (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 2.5V, 4V

Rds sees (max) @ id, Vgs : 6 Ohm @ 100mA, 4V

Vgs (th) (maksimaalselt) @ id : 1.2V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 0.58nC @ 4V

VG (maksimaalselt) : ±8V

Sisendmahtuvus (Ciss) (Max) @ Vds : 50.54pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 425mW (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 3-DFN1006 (1.0x0.6)

Pakett / kohver : 3-UFDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : DMP5 , DMP56D

dokumendid DMP56D0UFB-7

andmelehe : DMP56D0UFB-7.pdf

Seotud tooted DMP56D0UFB-7 Diodes Incorporated

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