RSS105N03FU6TB - MOSFET N-CH 30V 10.5A 8SOIC

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RSS105N03FU6TB

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ABC-RSS105N03FU6TB

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Rohm Semiconductor

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MOSFET N-CH 30V 10.5A 8SOIC

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spetsifikatsioonid RSS105N03FU6TB

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Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : RSS105N03FU6TB

tootja : Rohm Semiconductor

kirjeldus : MOSFET N-CH 30V 10.5A 8SOIC

seeria : -

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 10.5A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 4V, 10V

Rds sees (max) @ id, Vgs : 11.7 mOhm @ 10.5A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 15nC @ 5V

VG (maksimaalselt) : 20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1130pF @ 10V

FET funktsioon : -

Võimsuse hajumine (max) : 2W (Ta)

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 8-SOP

Pakett / kohver : 8-SOIC (0.154", 3.90mm Width)

kaal : -

tingimus : Uus ja originaal

seotud lingid : RSS1 , RSS105N

dokumendid RSS105N03FU6TB

andmelehe : RSS105N03FU6TB.pdf

Seotud tooted RSS105N03FU6TB Rohm Semiconductor

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