DMT10H009LSS-13 - MOSFET BVDSS 61V-100V SO-8 TR

Tootja arv

DMT10H009LSS-13

Sisemine osa number

ABC-DMT10H009LSS-13

tootja

Diodes Incorporated

Lühikirjeldus

MOSFET BVDSS 61V-100V SO-8 TR

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1200878 Pieces

Viide Hind

~~USD 0.27257~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on DMT10H009LSS-13 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid DMT10H009LSS-13

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : DMT10H009LSS-13

tootja : Diodes Incorporated

kirjeldus : MOSFET BVDSS 61V-100V SO-8 TR

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 13A (Ta), 48A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 9 mOhm @ 10A, 10V

Vgs (th) (maksimaalselt) @ id : 3V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 40.2nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 2309pF @ 50V

FET funktsioon : -

Võimsuse hajumine (max) : 1.8W (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 8-SO

Pakett / kohver : 8-SOIC (0.154", 3.90mm Width)

kaal : -

tingimus : Uus ja originaal

seotud lingid : DMT10 , DMT10H0

dokumendid DMT10H009LSS-13

andmelehe : DMT10H009LSS-13.pdf

Seotud tooted DMT10H009LSS-13 Diodes Incorporated

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