1N6622US - DIODE GEN PURP 660V 1.2A A-MELF

Tootja arv

1N6622US

Sisemine osa number

ABC-1N6622US

tootja

Microsemi Corporation

Lühikirjeldus

DIODE GEN PURP 660V 1.2A A-MELF

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

73305 Pieces

Viide Hind

~~USD 5.74~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on 1N6622US laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid 1N6622US

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : 1N6622US

tootja : Microsemi Corporation

kirjeldus : DIODE GEN PURP 660V 1.2A A-MELF

seeria : -

Osa olek : Active

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 660V

Praegune - keskmine puhastatud (Io) : 1.2A

Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.4V @ 1.2A

Kiirus : Fast Recovery =< 500ns, > 200mA (Io)

Vastupidine taastumisaeg (trr) : 30ns

Praegune - vastupidine leke @ Vr : 500nA @ 660V

Mahtuvus @ Vr, F : 10pF @ 10V, 1MHz

Paigaldus tüüp : Surface Mount

Pakett / kohver : SQ-MELF, A

Tarnija seadme pakett : A-MELF

Töötemperatuur - ristmik : -65°C ~ 150°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : 1N , 1N66

dokumendid 1N6622US

andmelehe : 1N6622US.pdf

Seotud tooted 1N6622US Microsemi Corporation

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