HUFA76609D3ST_F085 - MOSFET N-CH 100V 10A DPAK

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HUFA76609D3ST_F085

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ABC-HUFA76609D3ST_F085

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ON Semiconductor

Lühikirjeldus

MOSFET N-CH 100V 10A DPAK

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

47481 Pieces

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ABC Semiconductor on HUFA76609D3ST_F085 laos müüa.

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spetsifikatsioonid HUFA76609D3ST_F085

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : HUFA76609D3ST_F085

tootja : ON Semiconductor

kirjeldus : MOSFET N-CH 100V 10A DPAK

seeria : Automotive, AEC-Q101, UltraFET™

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 100V

Praegune - pidev äravool (id) @ 25 ° C : 10A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 160 mOhm @ 10A, 10V

Vgs (th) (maksimaalselt) @ id : 3V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 16nC @ 10V

VG (maksimaalselt) : ±16V

Sisendmahtuvus (Ciss) (Max) @ Vds : 425pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 49W (Tc)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-252AA

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

kaal : -

tingimus : Uus ja originaal

seotud lingid : HUFA76 , HUFA76609

dokumendid HUFA76609D3ST_F085

andmelehe : HUFA76609D3ST_F085.pdf

Seotud tooted HUFA76609D3ST_F085 ON Semiconductor

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