1N6081US - DIODE GEN PURP 150V 2A G-MELF

Tootja arv

1N6081US

Sisemine osa number

ABC-1N6081US

tootja

Microsemi Corporation

Lühikirjeldus

DIODE GEN PURP 150V 2A G-MELF

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

66112 Pieces

Viide Hind

~~USD 22.62975~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on 1N6081US laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid 1N6081US

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : 1N6081US

tootja : Microsemi Corporation

kirjeldus : DIODE GEN PURP 150V 2A G-MELF

seeria : -

Osa olek : Active

Dioodi tüüp : Standard

Pinge - tagurpidi alalisvool (Vr) (max) : 150V

Praegune - keskmine puhastatud (Io) : 2A

Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.5V @ 37.7A

Kiirus : Fast Recovery =< 500ns, > 200mA (Io)

Vastupidine taastumisaeg (trr) : 30ns

Praegune - vastupidine leke @ Vr : 10µA @ 150V

Mahtuvus @ Vr, F : -

Paigaldus tüüp : Surface Mount

Pakett / kohver : SQ-MELF, G

Tarnija seadme pakett : G-MELF (D-5C)

Töötemperatuur - ristmik : -65°C ~ 155°C

kaal : -

tingimus : Uus ja originaal

seotud lingid : 1N , 1N60

dokumendid 1N6081US

andmelehe : 1N6081US.pdf

Seotud tooted 1N6081US Microsemi Corporation

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