TK31J60W,S1VQ - MOSFET N CH 600V 30.8A TO-3PN

Tootja arv

TK31J60W,S1VQ

Sisemine osa number

ABC-TK31J60W,S1VQ

tootja

Toshiba Semiconductor and Storage

Lühikirjeldus

MOSFET N CH 600V 30.8A TO-3PN

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

88536 Pieces

Viide Hind

~~USD 4.225~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on TK31J60W,S1VQ laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid TK31J60W,S1VQ

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : TK31J60W,S1VQ

tootja : Toshiba Semiconductor and Storage

kirjeldus : MOSFET N CH 600V 30.8A TO-3PN

seeria : DTMOSIV

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 600V

Praegune - pidev äravool (id) @ 25 ° C : 30.8A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 88 mOhm @ 15.4A, 10V

Vgs (th) (maksimaalselt) @ id : 3.7V @ 1.5mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 86nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 3000pF @ 300V

FET funktsioon : Super Junction

Võimsuse hajumine (max) : 230W (Tc)

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Through Hole

Tarnija seadme pakett : TO-3P(N)

Pakett / kohver : TO-3P-3, SC-65-3

kaal : -

tingimus : Uus ja originaal

seotud lingid : TK31 , TK31J6

dokumendid TK31J60W,S1VQ

andmelehe : TK31J60W,S1VQ.pdf

Seotud tooted TK31J60W,S1VQ Toshiba Semiconductor and Storage

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