DMTH8012LPSW-13 - MOSFET N-CH 80V 53.7A POWERDI506

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DMTH8012LPSW-13

Sisemine osa number

ABC-DMTH8012LPSW-13

tootja

Diodes Incorporated

Lühikirjeldus

MOSFET N-CH 80V 53.7A POWERDI506

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

saadaval Kogus

1559908 Pieces

Viide Hind

~~USD 0.209835~~

Meie hind

- (Palun võtke meiega parem hind: [email protected])

ABC Semiconductor on DMTH8012LPSW-13 laos müüa.

Saatmine võimalusi ja tarneaeg:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Maksevõimalused:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spetsifikatsioonid DMTH8012LPSW-13

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : DMTH8012LPSW-13

tootja : Diodes Incorporated

kirjeldus : MOSFET N-CH 80V 53.7A POWERDI506

seeria : -

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 80V

Praegune - pidev äravool (id) @ 25 ° C : 53.7A (Tc)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 17 mOhm @ 12A, 10V

Vgs (th) (maksimaalselt) @ id : 3V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 34nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1949pF @ 40V

FET funktsioon : -

Võimsuse hajumine (max) : 3.1W (Ta)

Töötemperatuur : -55°C ~ 175°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : PowerDI5060-8

Pakett / kohver : 8-PowerTDFN

kaal : -

tingimus : Uus ja originaal

seotud lingid : DMTH8 , DMTH801

dokumendid DMTH8012LPSW-13

andmelehe : DMTH8012LPSW-13.pdf

Seotud tooted DMTH8012LPSW-13 Diodes Incorporated

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