SI1022R-T1-GE3 - MOSFET N-CH 60V 330MA SC-75A

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SI1022R-T1-GE3

Sisemine osa number

ABC-SI1022R-T1-GE3

tootja

Vishay Siliconix

Lühikirjeldus

MOSFET N-CH 60V 330MA SC-75A

RoHS-staatus

Pliivaba / RoHS Vastavuses

Tarne aeg

1-2 päeva

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3232516 Pieces

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~~USD 0.10126~~

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ABC Semiconductor on SI1022R-T1-GE3 laos müüa.

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spetsifikatsioonid SI1022R-T1-GE3

kvaliteedi tagamise : 365 päeva garantii

stock Resource : Frantsiisi Edasimüüja / Tootja Direct

Päritoluriik : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Osa number : SI1022R-T1-GE3

tootja : Vishay Siliconix

kirjeldus : MOSFET N-CH 60V 330MA SC-75A

seeria : TrenchFET®

Osa olek : Active

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 60V

Praegune - pidev äravool (id) @ 25 ° C : 330mA (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 1.25 Ohm @ 500mA, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 250µA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 0.6nC @ 4.5V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 30pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 250mW (Ta)

Töötemperatuur : -55°C ~ 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : SC-75A

Pakett / kohver : SC-75A

kaal : -

tingimus : Uus ja originaal

seotud lingid : SI10 , SI1022R

dokumendid SI1022R-T1-GE3

andmelehe : SI1022R-T1-GE3.pdf

Seotud tooted SI1022R-T1-GE3 Vishay Siliconix

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